Electrical and microstructural characterisation of an ultrathin silicon interlayer used in a silicon dioxide/germanium-based MIS structure

4 August 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (16) , 1010-1011
https://doi.org/10.1049/el:19880687

Abstract

Ultrathin (1.0 nm) Si layers have been deposited on Ge(100) surfaces using remote plasma-enhanced chemical vapour deposition (RPECVD) at 350°C followed by in situ RPECVD deposition of an SiO₂ insulating layer. Microstructural data from transmission electron microscopy along with elemental analysis from X-ray photoelectron spectroscopy and ion scattering spectroscopy indicate that the Si layer is present and may be pseudomorphic in nature. The formation of a Si/Ge heterojunction prior to oxide deposition minimises the formation of Ge oxides and thus controls the chemical nature of the Ge surface. Indeed, dramatic improvements in the electrical interfacial characteristics were observed in the SiO₂/Si/Ge over the SiO₂/Ge MIS structure.

Keywords

This publication has 2 references indexed in Scilit:

In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition
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