In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge filmsJournal of Applied Physics, 1986
- Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxyJournal of Applied Physics, 1985
- Free-standing thin film Ge single crystals grown by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1984
- Effect of Si-Ge buffer layer for low-temperature Si epitaxial growth on Si substrate by rf plasma chemical vapor depositionJournal of Applied Physics, 1983
- Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germaneApplied Physics Letters, 1982
- Heteroepitaxy of vacuum-evaporated Ge films on single-crystal SiApplied Physics Letters, 1981
- Epitaxial growth of amorphous Ge films deposited on single-crystal GeJournal of Applied Physics, 1981
- The surface structure of Si(100) surfaces using averaged leed: I. The(1 × 1)H structureSurface Science, 1977
- Silicon homoepitaxial thin films via silane pyrolysis: A HEED and Auger electron spectroscopy studySurface Science, 1972
- Observations of cleaned and oxygen exposed surfaces of silicon and germanium by reflection high energy electron diffractionSurface Science, 1970