Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge films
- 15 November 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (10) , 3519-3522
- https://doi.org/10.1063/1.337604
Abstract
Epitaxial Ge films have been deposited at 300 °C using a remote plasma-enhanced chemical-vapor deposition technique where metastable He atoms flow downstream from the plasma region to dissociate GeH4 molecules into deposition precursor species. Ge epitaxy is demonstrated on Ge(111), Si(100), and GaAs(111)Ga face substrates. An in situ cleaning process that involves a moderate thermal bake at 300 °C and a hydrogen plasma etch of the native oxides is integral to the process. Reflection high-energy electron diffraction is used to examine surface quality just prior to and after deposition. Uniform integral order diffraction streaks and fractional order reconstruction features observed from the Ge epilayers indicate that high quality Ge epitaxial layers can be grown using remote plasma-enhanced chemical-vapor deposition.This publication has 15 references indexed in Scilit:
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