Solid phase epitaxy of deposited amorphous Ge on GaAs
- 15 October 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (8) , 815-817
- https://doi.org/10.1063/1.95993
Abstract
Solid phase epitaxial growth of electron beam deposited amorphous germanium on GaAs has been obtained. Contamination at the Ge/GaAs interface is observed to impede and even prevent epitaxy of the deposited Ge layer. Complete epitaxy of the Ge was obtained by thermal annealing (400 °C for 1 h) of layers deposited on in situ sputter cleaned GaAs substrates.Keywords
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