Structural Equilibration in Pure and Hydrogenated Amorphous Silicon
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Defects in amorphous silicon probed by subpicosecond photocarrier dynamicsApplied Physics Letters, 1992
- Defects and impurities in amorphous semiconductors and in liquid electrolytesApplied Physics A, 1992
- On the mechanism of doping and defect formation in a-Si: HPhilosophical Magazine Part B, 1991
- Saturation and recovery kinetics of current-induced defects in a-Si:HJournal of Non-Crystalline Solids, 1991
- An investigation of the phosphorous doping mechanism in a-Si by sweep-out experimentsJournal of Non-Crystalline Solids, 1991
- The defect density in amorphous siliconPhilosophical Magazine Part B, 1989
- Calorimetric evidence for structural relaxation in amorphous siliconPhysical Review Letters, 1989
- Transient structural relaxation of amorphous siliconJournal of Non-Crystalline Solids, 1988
- Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser IrradiationPhysical Review Letters, 1984
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982