Defects and impurities in amorphous semiconductors and in liquid electrolytes
- 1 January 1992
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 54 (1) , 40-46
- https://doi.org/10.1007/bf00348128
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Experimental tests of the autocompensation model of dopingPhilosophical Magazine Part B, 1991
- Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation LayersJournal of the Electrochemical Society, 1990
- Band tails, entropy, and equilibrium defects in hydrogenated amorphous siliconPhysical Review Letters, 1987
- A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous siliconApplied Physics A, 1986
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982
- A theory of a.c. conduction in chalcogenide glassesPhilosophical Magazine, 1977
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Electrons in disordered structuresAdvances in Physics, 1967