Modification of the microstructure in epitaxial erbium silicide
- 12 April 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (15) , 1748-1750
- https://doi.org/10.1063/1.109594
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Infrared response of Pt/Si/ErSi1.7 heterostructure: Tunable internal photoemission sensorApplied Physics Letters, 1992
- Structures and magnetic properties of RMxcompounds (R = rare earth, M = Ge or Si, 1.5 ≤x≤ 2) as observed by neutron diffractionPhase Transitions, 1991
- Electrical and optical characterization of GdSi2 and ErSi2 alloy thin filmsJournal of Applied Physics, 1990
- Extremely low resistivity erbium ohmic contacts to n-type siliconApplied Physics Letters, 1989
- Formation of epitaxial yttrium silicide on (111) siliconJournal of Applied Physics, 1989
- Metallurgical reinvestigation of rare earth silicidesApplied Surface Science, 1989
- Electronic transport properties of epitaxial erbium silicide/silicon heterostructuresApplied Physics Letters, 1989
- Epitaxial growth of rare-earth silicides on (111) SiApplied Physics Letters, 1986
- The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type siliconApplied Physics Letters, 1981
- The formation of silicides from thin films of some rare-earth metalsApplied Physics Letters, 1980