Electrical properties of n-GaN/n+-GaAs interfaces
- 15 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 773-777
- https://doi.org/10.1016/s0022-0248(98)00289-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Current-voltage characteristics and capacitance of isotype heterojunctionsSolid-State Electronics, 1967
- Interface states in abrupt semiconductor heterojunctionsSolid-State Electronics, 1964
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962