Galvanomagnetic properties of dislocations in GaAs

Publisher Website
Google Scholar
Abstract
Galvanomagnetic measurements on plastically deformed GaAs have been compared with theoretical calculations of the Hall effect and of the induced resistivity associated with dislocation scattering mechanisms. This analysis allows us to confirm that dislocations are responsible for the existence of an amphoteric one-dimensional energy band located very near the top of the valence band. It also points out that scattering mechanisms acting on the free carrier mobility are mainly connected with the deformation potential reinforced by the Coulomb potential when dislocations are sufficiently charged (case of n type materials)

This publication has 11 references indexed in Scilit: