Characteristics of GaAs with inverted thermal conversion
- 15 October 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (8) , 3482-3485
- https://doi.org/10.1063/1.339271
Abstract
GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semi-insulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 109 Ω cm of 300 K) than those attained in standard SI GaAs (e.g., 107–108 Ω cm).This publication has 9 references indexed in Scilit:
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