High Quality Interfaces in a-Si:H/a-Sic:H Superlattices
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Amorphous multilayers with low interface defect density were deposited in an ultrahigh-vacuum RF-glow discharge reactor by computer-controlled fast gas switching. An extensive film characterization was done including determination of carbon content by PES (proton enhanced scattering), grazing-incidence X-ray diffraction, measurement of ambipolar diffusion length, FTIR spectroscopy and hydrogen effusion. From PDS (photothermal deflection spectroscopy) a defect density of below 1011 cm−2 per interface is found.Keywords
This publication has 6 references indexed in Scilit:
- Investigation of amorphous a-Si:H/a-Si1−xCx:H multi-quantum-well structuresSuperlattices and Microstructures, 1989
- Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating techniquePhysical Review B, 1988
- Structutral and electrical properties of silicon-based amorphous alloysJournal of Non-Crystalline Solids, 1987
- Characterization of a-Si1-xCx:H/a-Si:H and a-SiNX:H/a-Si:H heterojunctions by photothermal deflection spectroscopyJournal of Non-Crystalline Solids, 1987
- High-Quality a-Si-Based Alloys : a-SiGe Films Fabricated in a Super Chamber and Superlattice Structure a-Si Films Prepared by a Photo-CVD MethodMRS Proceedings, 1987
- Properties and structure of a-SiC:H for high-efficiency a-Si solar cellJournal of Applied Physics, 1982