Simple models for high-frequency MESFETs and comparison with experimental results
- 1 January 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings H Microwaves, Antennas and Propagation
- Vol. 133 (5) , 335-340
- https://doi.org/10.1049/ip-h-2.1986.0061
Abstract
The paper presents a distributed model for high-frequency MESFETs and compares experimentalS-parameter measurements to 26 GHz with distributed and lumped models. The concept of distributed effects within a MESFET is used to modify the Fukui noise model, and good agreement has been obtained between high-frequency (35 GHz) noise measurements and the modified Fukui analysis.Keywords
This publication has 1 reference indexed in Scilit:
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975