Heteroepitaxial growth of GaP layers on CuInS2 and their characterization
- 1 July 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 81 (2) , 145-154
- https://doi.org/10.1016/0040-6090(81)90301-1
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Growth and properties of sputter-deposited CuInS2 thin filmsThin Solid Films, 1980
- Growth and characterization of thin‐film compound semiconductor photovoltaic heterojunctionsJournal of Vacuum Science and Technology, 1977
- Heterojunctions in photovoltaic devicesJournal of Vacuum Science and Technology, 1977
- Electron and hole conductivity in CuInS2Journal of Physics and Chemistry of Solids, 1976
- Room-Temperature Electrical Properties of Ten I-III-VI2 SemiconductorsJournal of Applied Physics, 1972
- Electrical Properties of Sulfur-Doped Gallium PhosphideJournal of Applied Physics, 1968
- Epitaxial Deposition of Germanium by Both Sputtering and EvaporationJournal of Applied Physics, 1966
- Forward characteristics of heterojunctionsElectronics Letters, 1965