Fluorine-Doped Indium Oxide Thin Films Prepared by Chemical Vapor Deposition

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Abstract
Transparent conductive fluorine-doped indium oxide thin films were prepared by an atmospheric-pressure chemical vapor deposition method without using an oxygen donor. The raw materials were indium 2-ethylhexanoate and indium fluoride. The polycrystalline films were obtained at a reaction temperature in the range of 330–430°C. For the 57.8-nm-thick film deposited at 400°C, the resistivity was 2.89×10-4 Ω·cm, and the transmittance was more than 85% in most of the visible range (470–700 nm). The effects of fluorine doping on the deposition rate, structure and characteristics of the film were discussed by comparing the results with the corresponding values for nondoped indium oxide film.