AlGaN/GaN high electron mobility transistors with InGaN back-barriers
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- 19 December 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 27 (1) , 13-15
- https://doi.org/10.1109/led.2005.860882
Abstract
A GaN/ultrathin InGaN/GaN heterojunction has been used to provide a back-barrier to the electrons in an AlGaN/GaN high-electron mobility transistor (HEMT). The polarization-induced electric fields in the InGaN layer raise the conduction band in the GaN buffer with respect to the GaN channel, increasing the confinement of the two-dimensional electron gas under high electric field conditions. The enhanced confinement is especially useful in deep-submicrometer devices where an important improvement in the pinchoff and 50% increase in the output resistance have been observed. These devices also showed excellent high-frequency performance, with a current gain cut-off frequency (f/sub T/) of 153 GHz and power gain cut-off frequency (f/sub max/) of 198 GHz for a gate length of 100 nm. At a different bias, a record f/sub max/ of 230 GHz was obtained.Keywords
This publication has 7 references indexed in Scilit:
- Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low TemperaturesIEEE Electron Device Letters, 2006
- Cat-CVD SiN insulated-gate AlGaN/GaN HFETs with 163 GHz f/sub T/ and 184 GHz f/sub max/Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 30-W/mm GaN HEMTs by Field Plate OptimizationIEEE Electron Device Letters, 2004
- 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrateElectronics Letters, 2004
- 10-W/mm AlGaN-GaN HFET with a field modulating plateIEEE Electron Device Letters, 2003
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect TransistorJapanese Journal of Applied Physics, 2001
- AlGaN/AlN/GaN high-power microwave HEMTIEEE Electron Device Letters, 2001