12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate
- 8 January 2004
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 40 (1) , 73-74
- https://doi.org/10.1049/el:20040017
Abstract
Record power performance at 4 GHz has been obtained using field-plated AlGaN/GaN HEMTs on sapphire substrate. High power density (12 W/mm) as well as high efficiency (58%) have been measured. A comparison between devices with and without field plate on the same sample showed a significant reduction in knee-voltage walk-out for the field-plated device, thus enabling high power and efficiency operation.Keywords
This publication has 4 references indexed in Scilit:
- 10-W/mm AlGaN-GaN HFET with a field modulating plateIEEE Electron Device Letters, 2003
- 2.1 A/mm current density AlGaN/GaN HEMTElectronics Letters, 2003
- AlGaN/GaN HEMTs-an overview of device operation and applicationsProceedings of the IEEE, 2002
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETsIEEE Transactions on Electron Devices, 2001