Pattern Fidelity in Submicron Lithography with a Rectangular Electron Beam

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Abstract
The energy density profiles deposited in a PMMA resist film by a 0.5 µm square electron beam are calculated by Monte Carlo simulation. The influence of a combination of beam accelerating voltages and beam edge widths on the pattern fidelity is studied by examining some characteristic parameters. Simulation shows that one of these parameters, the energy efficiency, has a tendency to saturate above 50 kV, and that larger beam edge widths are allowable for higher voltages in obtaining the desired values for the characteristic parameters, which are exemplified by a normalized energy edge slope and the roundness of the square pattern. A combination of voltages of 30–50 kV and a beam edge width of <0.2 µm is desirable in 0.5 µm lithography. High-fidelity 0.5 µm patterns are obtained experimentally with an electron beam system employing writing strategies based on this simulation.

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