Thermal oxidation of InAs
- 1 August 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 70 (2) , 325-332
- https://doi.org/10.1016/0040-6090(80)90373-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Thermal oxidation of InPJournal of Applied Physics, 1980
- An X‐Ray Photoelectron Spectroscopy Study of Native Oxides on GaAsJournal of the Electrochemical Society, 1979
- Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPSJournal of Vacuum Science and Technology, 1979
- The transport of electrons in quantized inversion and accumulation layers in III–V compoundsThin Solid Films, 1979
- In-Depth Profiles of Oxide Films on GaAs Studied by XPSJapanese Journal of Applied Physics, 1978
- Detection of excess crystalline As and Sb in III-V oxide interfaces by Raman scatteringApplied Physics Letters, 1977
- Single- and double-layer insulator metal-oxide-semiconductor capacitors on indium arsenideThin Solid Films, 1977
- Oxide layers on III–V compound semiconductorsThin Solid Films, 1976
- Correlation between the composition profile and electrical conductivity of the thermal and anodic oxides of InSbJournal of Vacuum Science and Technology, 1976
- Capacitance voltage measurements on n-type InAs MOS diodesSolid-State Electronics, 1971