Growth of single-crystal metastable Ge1-xSnx alloys on Ge(100) and GaAs(100) substrates
- 1 May 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 83 (1) , 3-10
- https://doi.org/10.1016/0022-0248(87)90495-7
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Direct evidence for an order/disorder phase transition at x≂0.3 in single-crystal metastable (GaSb)(1−x)(Ge2)x alloys: High-resolution x-ray diffraction measurementsJournal of Applied Physics, 1986
- Nonunique structure of metastable (GaSb( alloysPhysical Review Letters, 1985
- Optical Absorption in Single-Crystal Metastable Alloys: Evidence for a Zinc-Blende-Diamond Order-Disorder TransitionPhysical Review Letters, 1983
- Raman scattering from crystalline and amorphous (GaSb)1-xGex semiconducting filmsSolid State Communications, 1983
- Growth and optical properties of single-crystal metastable (GaAs)
1−
x
Ge
x
alloysElectronics Letters, 1982
- Growth of single crystal GaAs and metastable (GaSb)1−xGexAlloys by sputter deposition: Ion-surface interaction effectsJournal of Crystal Growth, 1982
- Growth of single-crystal metastable semiconducting (GaSb)1−xGex filmsApplied Physics Letters, 1981
- Growth and thermal stability of single crystal metastable semiconducting (GaSb),1−xGex filmsVacuum, 1981
- Growth and phase stability of epitaxial metastable InSb1−xBix films on GaAs. II. Phase stabilityJournal of Applied Physics, 1980
- Growth and phase stability of epitaxial metastable InSb1−xBix films on GaAs. I. Crystal growthJournal of Applied Physics, 1980