Equilibrium and metastable strained layer semiconductor heterostructures
- 29 February 1996
- journal article
- Published by Elsevier in Current Opinion in Solid State and Materials Science
- Vol. 1 (1) , 21-28
- https://doi.org/10.1016/s1359-0286(96)80005-2
Abstract
No abstract availableKeywords
This publication has 70 references indexed in Scilit:
- Atomistic study of dislocation nucleation in Ge/(001)Si heterostructusesPhilosophical Magazine A, 1995
- Interfacial roughness scaling and strain in lattice mismatched Si0.4Ge0.6 thin films on SiApplied Physics Letters, 1995
- Temperature and strain dependence of the roughening transition in III-V semiconductor and SiGe epitaxial growthJournal of Applied Physics, 1995
- Crack-Like Sources of Dislocation Nucleation and Multiplication in Thin FilmsScience, 1995
- Growth ripples upon strained SiGe epitaxial layers on Si and misfit dislocation interactionsJournal of Vacuum Science & Technology A, 1994
- Competing relaxation mechanisms in strained layersPhysical Review Letters, 1994
- Cracklike surface instabilities in stressed solidsPhysical Review Letters, 1993
- Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of As on GaAs(100)Physical Review B, 1992
- Relaxation of strained-layer semiconductor structures via plastic flowApplied Physics Letters, 1987
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975