Soft error stability of p-well versus n-well CMOS latches derived from 2-D transient simulations

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6 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1988.32867

Abstract

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Keywords

This publication has 3 references indexed in Scilit:

Experimental determination of time constants for ion-induced transients in static memories
IEEE Transactions on Electron Devices, 1988
RAM cell recovery mechanisms following high-energy ion strikes
IEEE Electron Device Letters, 1987
Comparison of Analytical Models and Experimental Results for Single Event Upset in CMOS SRAMs
IEEE Transactions on Nuclear Science, 1983