Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates
- 1 November 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 16 (6) , 3281-3286
- https://doi.org/10.1116/1.581534
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Photoresist erosion studied in an inductively coupled plasma reactor employing CHF3Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Method for the determination of the angular dependence during dry etchingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- An evaluation of the intrinsic emittance of a field emitterJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- The role of polymer deposited in differential dielectric etchJournal of Vacuum Science & Technology A, 1996
- Characterization of Highly Selective SiO2/Si3N4 Etching of High-Aspect-Ratio HolesJapanese Journal of Applied Physics, 1996
- Reactive ion etching of silicon oxynitride formed by plasma-enhanced chemical vapor depositionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Influence of different etching mechanisms on the angular dependence of silicon nitride etchingJournal of Vacuum Science & Technology A, 1993
- Influence of polymer formation on the angular dependence of reactive ion beam etchingJournal of Vacuum Science & Technology A, 1992
- Mechanism of the Slow-Down of the Silicon Etch Rate by a Fluorocarbon Overlayer in CF4/H2 Reactive Ion Etching of SiliconMRS Proceedings, 1987
- Ion interaction with solids: Surface texturing, some bulk effects, and their possible applicationsJournal of Vacuum Science and Technology, 1981