Time resolved photoluminescence studies in a reverse biased quantum well laser structure
- 23 November 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (21) , 2497-2499
- https://doi.org/10.1063/1.108160
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Intersubband photocurrent from the quantum well of an asymmetrical double-barrier structureJournal of Applied Physics, 1991
- Fast escape of photocreated carriers out of shallow quantum wellsApplied Physics Letters, 1991
- Quantum well carrier sweep out: relation to electroabsorption and exciton saturationIEEE Journal of Quantum Electronics, 1991
- Electric-field-dependent photoresponse of multiple quantum well modulatorElectronics Letters, 1989
- Thermionic emission and Gaussian transport of holes in a GaAs/As multiple-quantum-well structurePhysical Review B, 1988
- Photoconductive response time of a multiple quantum well pin modulatorElectronics Letters, 1988
- Tunable superlattice p-i-n photodetectors: characteristics, theory, and applicationIEEE Journal of Quantum Electronics, 1988
- Radiative recombination coefficient of free carriers in GaAs-AlGaAs quantum wells and its dependence on temperatureApplied Physics Letters, 1987
- Field-dependent linewidths and photoluminescence energies in GaAs-AlGaAs multiquantum well modulatorsApplied Physics Letters, 1986
- Electric field induced decrease of photoluminescence lifetime in GaAs quantum wellsApplied Physics Letters, 1985