Carrier Confinement in AlGaN/GaN Heterostructures Grown by Plasma Induced Molecular Beam Epitaxy
- 1 August 1998
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing wavesJournal of Applied Physics, 1998
- Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substratesApplied Physics Letters, 1998
- Microwave performance of AlGaN/GaN inverted MODFET'sIEEE Electron Device Letters, 1997
- Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interfaceApplied Physics Letters, 1997