Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
Top Cited Papers
- 23 March 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (13) , 2331-2333
- https://doi.org/10.1063/1.1689401
Abstract
We report on the resonant, voltage tunable emission of terahertz radiation (0.4–1.0 THz) from a gated two-dimensional electron gas in a 60 nm InGaAs high electron mobility transistor. The emission is interpreted as resulting from a current driven plasma instability leading to oscillations in the transistor channel (Dyakonov–Shur instability).Keywords
This publication has 7 references indexed in Scilit:
- Plasma and transit-time mechanisms of the terahertz radiation detection in high-electron-mobility transistorsSemiconductor Science and Technology, 2003
- Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHzIEEE Electron Device Letters, 2002
- Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistorsApplied Physics Letters, 2002
- Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistorsApplied Physics Letters, 2002
- Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluidIEEE Transactions on Electron Devices, 1996
- Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc currentPhysical Review Letters, 1993
- A far-infrared spectrometer based on cyclotron resonance emission sourcesReview of Scientific Instruments, 1992