Effect of forming gas anneal on Al–SiO2 internal photoemission characteristics
- 1 September 1981
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5867-5869
- https://doi.org/10.1063/1.329460
Abstract
Internal photoemission characteristics from the Al–SiO2 interface are markedly affected by a 400 °C 20 min forming gas (90% N2 and 10% H2) anneal. The barrier height is raised by about 0.25 eV and the electric field dependence of the photocurrent is increased.This publication has 5 references indexed in Scilit:
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- Polarization layer at metal/insulator interfacesC R C Critical Reviews in Solid State Sciences, 1975
- Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972
- Photoinjection into SiO2: Electron Scattering in the Image Force Potential WellJournal of Applied Physics, 1971
- BARRIER LOWERING AND FIELD PENETRATION AT METAL-DIELECTRIC INTERFACESApplied Physics Letters, 1966