Mechanism of rapid thermal nitridation of thin oxides
- 1 December 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (11) , 5851-5855
- https://doi.org/10.1063/1.346959
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Mobility Degradation of Nitrided Oxide MISFET'sJournal of the Electrochemical Society, 1988
- Improved surface nitridation of SiO2 thin films in low ammonia pressuresApplied Physics Letters, 1987
- A kinetic model for the thermal nitridation of SiO2/SiJournal of Applied Physics, 1986
- Hydrogenation during thermal nitridation of silicon dioxideJournal of Applied Physics, 1986
- Study of the kinetics and mechanism of the thermal nitridation of SiO2Applied Physics Letters, 1985
- Thermal nitridation of Si and SiO2for VLSIIEEE Transactions on Electron Devices, 1985
- Radiation effects in nitrided oxidesIEEE Electron Device Letters, 1983
- Distribution of nitrogen in thermally nitrided SiO2Journal of Vacuum Science & Technology B, 1983
- Radiation-Induced Defects in SiO2 as Determined with XPSIEEE Transactions on Nuclear Science, 1982
- Thermal nitridation of silicon dioxide filmsJournal of Applied Physics, 1982