Tunneling Measurements on A15 Nb–Si Films

1 January 1984

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 23 (1A) , L32
https://doi.org/10.1143/jjap.23.l32

Abstract

Tunnel junctions have been fabricated on A15 Nb–Si (19–21 at.% Si) films prepared by a dual-target dc-magnetron sputtering method. Nb–Si/oxide/Pb junctions with good tunneling characteristics were obtained using a CF₄ cleaning process, in which the Nb–Si base electrode surface was sputter-cleaned in an Ar+CF₄ gas mixture prior to oxide barrier formation. Tunneling measurements indicate that Nb-rich A15 Nb–Si is a weak-coupling superconductor, as the same as Nb-rich A15 Nb–Ge and Nb–Al.

Keywords

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