Transistors with boron bases predeposited by ion implantation and annealed in various oxygen ambients
- 1 June 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 24 (6) , 717-723
- https://doi.org/10.1109/t-ed.1977.18810
Abstract
Ion implanted bases result in better uniformity and wafer to wafer reproducibility for base resistors and transistor gain compared to diffused bases. However, when implanted boron is used as a replacement for a chemically predeposited base onKeywords
This publication has 9 references indexed in Scilit:
- Boron Diffusion in Silicon‐Concentration and Orientation Dependence, Background Effects, and Profile EstimationJournal of the Electrochemical Society, 1975
- Adaption of Ion Implantation for Integrated CircuitsJournal of the Electrochemical Society, 1975
- Reduced gain of ion−implanted transistorsApplied Physics Letters, 1975
- Role of sequential annealing, oxidation, and diffusion upon defect generation in ion-implanted silicon surfacesJournal of Applied Physics, 1974
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974
- Relationship Between Process-Induced Defects and Soft P-N Junctions in Silicon DevicesJournal of the Electrochemical Society, 1974
- Oxygen precipitation at the oxidation-induced defects in siliconPhysica Status Solidi (a), 1973
- Oxidation, defects and vacancy diffusion in siliconPhilosophical Magazine, 1969
- A charge-control transistor model for network analysis programsProceedings of the IEEE, 1968