Role of sequential annealing, oxidation, and diffusion upon defect generation in ion-implanted silicon surfaces
- 1 April 1974
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (4) , 1635-1642
- https://doi.org/10.1063/1.1663468
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Surface Damage and Copper Precipitation in SiliconPhysica Status Solidi (b), 1963