A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology

This publication has 6 references indexed in Scilit:

• 63-75 GHz fT SiGe-base heterojunction bipolar technology
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990
• Graded-SiGe-base, poly-emitter heterojunction bipolar transistors
  IEEE Electron Device Letters, 1989
• An analytical and experimental investigation of the cutoff frequency f/sub T/ of high-speed bipolar transistors
  IEEE Transactions on Electron Devices, 1988
• Comparison of experimental and theoretical results on polysilicon emitter bipolar transistors
  IEEE Transactions on Electron Devices, 1984
• Effect of emitter contact on current gain of silicon bipolar devices
  IEEE Transactions on Electron Devices, 1980
• The SIS tunnel emitter: A theory for emitters with thin interface layers
  IEEE Transactions on Electron Devices, 1979