63-75 GHz fT SiGe-base heterojunction bipolar technology

Publisher Website

1 January 1990

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 49-50
https://doi.org/10.1109/vlsit.1990.111002

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Explosion of poly-silicide links in laser programmable redundancy for VLSI memory repair
IEEE Transactions on Electron Devices, 1989
A reduced-field design concept for high-performance bipolar transistors
IEEE Electron Device Letters, 1989