A reduced-field design concept for high-performance bipolar transistors
- 1 February 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (2) , 67-69
- https://doi.org/10.1109/55.32431
Abstract
A device profile design concept that reduces the junction field, and thus the high-field induced leakage currents as well as the avalanche current, is described. The insertion of an i-layer of thickness equal to the depletion-layer width of the original n/sup +/-p/sup +/ junction can lower the junction field by about a factor of two. Computer studies show that using this design, the collector avalanche current can be reduced by more than one order, while compromising little in the switching speed of the transistor.Keywords
This publication has 12 references indexed in Scilit:
- Modeling impact ionization in advanced bipolar transistors for device/circuit simulationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Explosion of poly-silicide links in laser programmable redundancy for VLSI memory repairIEEE Transactions on Electron Devices, 1989
- Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and designIEEE Transactions on Electron Devices, 1988
- Inherent and stress-induced leakage in heavily doped silicon junctionsIEEE Transactions on Electron Devices, 1988
- Forward-bias tunneling: A limitation to bipolar device scalingIEEE Electron Device Letters, 1986
- Switch-on transient of shallow-profile bipolar transistorsIEEE Transactions on Electron Devices, 1985
- A general control-volume formulation for modeling impact ionization in semiconductor transportIEEE Transactions on Electron Devices, 1985
- Tunneling in base-emitter junctionsIEEE Transactions on Electron Devices, 1983
- Finite-Element Analysis of Semiconductor Devices: The FIELDAY ProgramIBM Journal of Research and Development, 1981
- Bipolar circuit scalingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979