Tunneling in base-emitter junctions
- 1 November 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (11) , 1527-1534
- https://doi.org/10.1109/t-ed.1983.21333
Abstract
Tunneling currents in reverse-biased base-emitter junctions are investigated and analyzed. Guided by a simple analytic theory, shallow n+-p junctions are designed with a variety of different concentration profiles. Measurements of the dc electrical characteristics indicate a significant Zener tunneling component in the reverse diode current. The appearance of tunneling is ascertained by the temperature dependence, which also allows a clear distinction of other current mechanisms. The sensitivity of the current to the details of the doping profile is theoretically explained in terms of the maximum electric field in the junction and verified by SIMS andC-Vprofiling techniques. TheC-Vdata are analyzed in a novel way to obtain experimental data on the maximum electric field making the conclusions valid for any arbitrary junction. The implications of the presence of high electric fields in shallow junctions are discussed with respect to scaling bipolar transistors.Keywords
This publication has 14 references indexed in Scilit:
- Finite-Element Analysis of Semiconductor Devices: The FIELDAY ProgramIBM Journal of Research and Development, 1981
- Proposed process modifications for dynamic bipolar memory to reduce emitter-base leakage currentIEEE Transactions on Electron Devices, 1980
- Current transport in narrow-base transistorsSolid-State Electronics, 1977
- Zener and avalanche breakdown in As-implanted low-voltage Si n-p junctionsIEEE Transactions on Electron Devices, 1976
- The potential and electric field at the metallurgical boundary of an abrupt p-n semiconductor junctionIEEE Transactions on Electron Devices, 1975
- Comparison of leakage currents in ion-implanted and diffused p-n junctionsJournal of Applied Physics, 1975
- Questionability of drift-diffusion transport in the analysis of small semiconductor devicesSolid-State Electronics, 1974
- Thermodynamic considerations of junction capacitanceSolid-State Electronics, 1973
- THE INTRODUCTION OF CHARGE IN SiO2 AND THE INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER-BASE JUNCTION OF GATED TRANSISTORSApplied Physics Letters, 1969
- Zener tunneling in semiconductorsJournal of Physics and Chemistry of Solids, 1960