Zener and avalanche breakdown in As-implanted low-voltage Si n-p junctions

Abstract
Implanted-diffused As layers in Si have been well-characterized and have been used in fabricating low-voltage n-p junctions. It is shown that these As layers form linearly graded junctions with a uniform B-doped background (ρ ≃ 0.006 Ω.cm). The grade constant of the As profile at the junction is known sufficiently well as a function of As dose, diffusion time, and temperature to allow quantitative use of existing tunneling and avalanche theories for the calculation of the reverse I-V curves. Following a verification of the calculated I-V curves and their temperature dependence as a function of grade constant, calculated curves are presented which correlate As implant dose and diffusion with junction breakdown voltage, breakdown impedance, and temperature coefficient of reverse voltage. The temperature coefficient is shown to change from negative to positive as the transition from tunneling to avalanche occurs. In addition, the relative importance of tunneling and multiplied-generation current as a function of current density is elucidated for any particular As layer grade constant.

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