Explanation of anomalous base regions in transistors
- 15 February 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (4) , 186-187
- https://doi.org/10.1063/1.1654604
Abstract
The recent experimental results of Ziegler, Cole, and Baglin showed that in sequentially diffused boron‐arsenic npn silicon transistors, an unexplained depletion of boron occurs near the emitter‐base junction. This depletion effect could have an appreciable influence on transistor characteristics. A quantitative explanation is shown to exist, based upon the retarded base diffusion theory of Fair. The full‐profile experimental results of Ziegler et al. are shown to be accurately described by solutions to the coupled As–B diffusion equations when the junction electric field effect and the vacancy undersaturation condition created by VsiAs2 complex formation are taken into account.Keywords
This publication has 3 references indexed in Scilit:
- Quantitative theory of retarded base diffusion in silicon n-p-n structures with arsenic emittersJournal of Applied Physics, 1973
- Discovery of anomalous base regions in transistorsApplied Physics Letters, 1972
- Interactions in Sequential Diffusion Processes in SemiconductorsJournal of Applied Physics, 1968