Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design

This publication has 11 references indexed in Scilit:

• Degradation of bipolar transistors under high current stress at 300 K
  Journal of Applied Physics, 1988
• Poly emitter bipolar hot carrier effects in an advanced BiCMOS technology
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987
• Forward-bias tunneling: A limitation to bipolar device scaling
  IEEE Electron Device Letters, 1986
• Tunneling in base-emitter junctions
  IEEE Transactions on Electron Devices, 1983
• Self-aligned bipolar transistors for high-performance and low-power-delay VLSI
  IEEE Transactions on Electron Devices, 1981
• Bipolar circuit scaling
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1979
• Drift of the breakdown voltage in p-n junctions in silicon (walk-out)
  Solid-State Electronics, 1977
• Avalanche-injected electron currents in SiO2 at high injection densities
  Solid-State Electronics, 1974
• Avalanche degradation of h_FE
  IEEE Transactions on Electron Devices, 1970
• Effect of Degenerate Semiconductor Band Structure on Current-Voltage Characteristics of Silicon Tunnel Diodes
  Physical Review B, 1963