Silicon oxide epitaxial films investigated by neutron reflectivity

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Abstract
Two samples consisting of silicon oxide layers, of different thicknesses, on a crystalline silicon substrate have been investigated using the technique of neutron reflectivity. By simulating the neutron reflectivity from a theoretical scattering length density profile, and altering the profile so that the closest possible fit to the experimental data is achieved, the structures of the samples normal to the reflecting surfaces have been determined. This analysis has been performed using two different approaches, the results of which are compared. Finally, the advantages and disadvantages of the technique are discussed.