Si→transformation: Interfacial structure and mechanism
- 13 July 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 59 (2) , 213-216
- https://doi.org/10.1103/physrevlett.59.213
Abstract
We show that the c-Si→a- transformation takes place via an ordered crystalline oxide layer ≃5 Å thick. Modeling of high-resolution transmission electron-microscope lattice images in two projections suggests the crystalline oxide to be tridymite, a stable, bulk form of .
Keywords
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