High-efficiency, Ge-on-SOI lateral PIN photodiodes with 29 GHz bandwidth
- 23 December 2004
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- High performance germanium-on-silicon detectors for optical communicationsApplied Physics Letters, 2002
- High-quality Ge epilayers on Si with low threading-dislocation densitiesApplied Physics Letters, 1999
- High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffersApplied Physics Letters, 1998