High-speed interdigitated Ge PIN photodetectors
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 14 (3) , 369-371
- https://doi.org/10.1109/68.986816
Abstract
We report a high-speed PIN photodetector fabricated on Ge with planar interdigitated p/sup +/ - and n/sup +/ -fingers that were formed by ion implantation into a Ge substrate. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing with 50 × 50 μm 2 active area. At a wavelength of 1.3 μm, the bandwidth was 1.8, 2.6, and 3 GHz at bias voltages of 5, 10, and 15 V, respectively. The dark current was 0.9 and 10 μA at 5 and 15 V, respectively. This photodetector exhibited external quantum efficiencies over 60% in the spectral range 1.0-1.5 μm. At a wavelength of 1.3 μm, the external quantum efficiency was 67%.Keywords
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