Finite element iterative techniques for determining the interface boundary between Laplace and Poisson domains—characteristic analysis of a field effect transistor
- 1 March 1983
- journal article
- research article
- Published by Wiley in International Journal for Numerical Methods in Engineering
- Vol. 19 (3) , 315-329
- https://doi.org/10.1002/nme.1620190302
Abstract
Two kinds of techniques for solving a shape determination problem are proposed. The determination of the interface boundary between two domains governed by Poisson and Laplace equations under the compatible and constraint condition is considered. Influence coefficient and inverse variational approaches are examined by using the iterative finite element procedure. A two‐dimensional model of a junction‐type field effect transistor is a test example. The determination of its interface boundary and the prediction of the potential distribution and static characteristic are demonstrated.Keywords
This publication has 2 references indexed in Scilit:
- Field distribution near the surface of beveled P-N junctions in high-voltage devicesIEEE Transactions on Electron Devices, 1973
- Determination of Laplace—Poisson domain interface within semiconductor devicesProceedings of the Institution of Electrical Engineers, 1970