Room-temperature conductivity and the band structure of n-Ga1−xAlxAs
- 1 June 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (6) , 3269-3272
- https://doi.org/10.1063/1.328085
Abstract
Conductivity measurements on epitaxially grown silicon‐doped n‐Ga1−xAlxAs as a function of Al concentration x, for 0.10⩽x⩽0.65 are presented. Simple two‐probe measurements were made possible by the development of a low‐resistance Ohmic contact, with the contact resistance independent of x. A calculated three band (Γ, X, and L) conductivity of Ga1−xAlxAs as a function of x shows good agreement with the experimental results. The transition from a direct band‐gap semiconductor to an indirect one occurs at xc =0.45 at 300 °K. The device performance, however, begins to be affected at much lower Al concentration.This publication has 20 references indexed in Scilit:
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