Power and modulation bandwidth of gaAs-AlGaAs high-radiance LED's for optical communication systems
- 1 March 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 14 (3) , 150-159
- https://doi.org/10.1109/jqe.1978.1069761
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Material-dispersion-limited operation of high-bit-rate optical-fibre data links using l.e.d.sElectronics Letters, 1977
- LED for high data rate, optical communicationsOptics Communications, 1976
- Wide-bandwidth high-radiance gallium-arsenide light-emitting diodes for fibre-optic communicationElectronics Letters, 1976
- Zero material dispersion in optical fibresElectronics Letters, 1975
- Influence of active-layer width on the performance of homojunction and single-heterojunction GaAs light-emitting diodesElectronics Letters, 1975
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975
- Direct-modulation efficiency of LED's for optical fiber transmission applicationsProceedings of the IEEE, 1975
- Light-emitting diodesProceedings of the IEEE, 1972
- Radiance of small-area high-current-density electroluminescent diodesProceedings of the IEEE, 1972
- Single crystal electroluminescent materialsMaterials Science and Engineering, 1970