Maximum operating power of 1.3 μm strained layer multiple quantum well InGaAsP lasers
- 15 February 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (4) , 2367-2370
- https://doi.org/10.1063/1.369551
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Maximum operating temperature of the 1.3 μm strained layer multiple quantum well InGaAsP lasersJournal of Applied Physics, 1998
- Temperature performance of 1.3-μm InGaAsP-InP lasers with different profile of p-dopingIEEE Photonics Technology Letters, 1997
- Maximum output power and maximum operating temperature of quantum well lasersApplied Physics Letters, 1997
- Dominant mechanism for limiting the maximum operating temperature of InP-based multiple-quantum-well lasersJournal of Applied Physics, 1996
- An investigation into the temperature sensitivity of strained and unstrained multiple quantum-well, long wavelength lasers: new insight and methods of characterizationIEEE Journal of Selected Topics in Quantum Electronics, 1995
- Analysis of gain in determining T/sub 0/ in 1.3 μm semiconductor lasersIEEE Journal of Selected Topics in Quantum Electronics, 1995
- High temperature characteristics of InGaAsP/InP laser structuresApplied Physics Letters, 1993
- Temperature dependence of threshold of strained quantum well lasersApplied Physics Letters, 1991