High temperature characteristics of InGaAsP/InP laser structures

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Abstract
We investigate the high temperature performance of conventional separate confinement and lattice matched and compressively strained multi‐quantum‐well InGaAsP lasers emitting at 1.3 μm. Low threshold buried heterostructure lasers operate reproducibly at temperatures as high as 130 °C. The rate of threshold change with temperature is described by T 0∼45°–55° for both conventional and quantum well lasers. The rate of change is not influenced by any modifications in the active layerstructure. In contrast, excellent correlation is observed between the active layerstructure, parametrized as the threshold gain, and the peak cw operating temperature.