Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 371-376
- https://doi.org/10.1109/iscs.2000.947184
Abstract
The epitaxial growth of InGaN was investigated by molecular beam epitaxy (MBE) on GaN templates grown by metal-organic chemical vapor deposition (MOCVD). Structural and optical properties of bulk InGaN and multiple quantum well (MQW) InGaN/GaN heterostructures were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). XRD measurements found InGaN bulk and heterostructure compositions to be consistent. The MQW films showed peak PL positions > 550 nm. The advantage of reducing template dislocation density was studied.Keywords
This publication has 6 references indexed in Scilit:
- Two-step growth of high-quality GaN by hydride vapor-phase epitaxyApplied Physics Letters, 2000
- InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 KApplied Physics Letters, 2000
- Dislocation mediated surface morphology of GaNJournal of Applied Physics, 1999
- Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layerMRS Internet Journal of Nitride Semiconductor Research, 1999
- Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxyJournal of Applied Physics, 1997
- The Blue Laser DiodePublished by Springer Nature ,1997