Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
- Vol. 4 (1)
- https://doi.org/10.1557/s1092578300000582
Abstract
Lateral epitaxial overgrowth (LEO) on Si(111) substrates using an AlN buffer layer is demonstrated and characterized using scanning electron microscopy, atomic force microscopy, transmission electron microscopy, x-ray diffraction, photoluminescence spectroscopy, and cathodoluminescence imaging. The -oriented LEO GaN stripes grown on silicon substrates are shown to have similar structural properties as LEO GaN grown on GaN/Al2O3 substrates: the surface topography is characterized by continuous crystallographic steps rather than by steps terminated by screw-component threading dislocations; the density of threading dislocations is 6 cm−2; the LEO regions exhibit crystallographic tilt (0.7-4.7°) relative to the seed region. The AlN buffer thickness affects the stripe morphology and, in turn, the microstructure of the LEO GaN. The issues of chemical compability and thermal expansion mismatch are discussed.Keywords
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