Optical properties of tensile-strained wurtzite GaN epitaxial layers
- 21 April 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (16) , 2085-2087
- https://doi.org/10.1063/1.118958
Abstract
Photo-modulated electroreflectance and photoluminescence spectra of wurtzite GaN epilayers grown on a 6H-SiC (0001)Si or a Si (111) substrate were measured as a function of temperature. The valence band structure of a biaxially tensile-strained (−0.15% in c axis) epilayer was drastically changed compared to that in unstrained and compressively strained ones; the optical transition between the conduction and the uppermost valence band exhibiting the minimum transition energy was polarized parallel to the c axis, which is characteristic of the spin split-off valence band in unstrained crystal.Keywords
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