Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells
- 1 December 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (12A) , L1566-1568
- https://doi.org/10.1143/jjap.35.l1566
Abstract
We analyze theoretically for the first time valence-subband structures in wurtzite-GaN strained quantum wells (QWs) for various crystal orientations. The calculation is based on the Bir-Pikus effective-mass theory, where deformation potentials are determined by a semi-empirical tight-binding method. The obtained results show that the hole effective masses of strained QWs with non-(0001) orientation, in particular, around the (10*BAR*1*BAR*2) orientation, are markedly lighter than those of (0001) cases. We also found that the optical matrix elements of non-(0001) strained QWs are twice as large as those for (0001) strained QWs.Keywords
This publication has 12 references indexed in Scilit:
- Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layersApplied Physics Letters, 1996
- Tight-Binding Analysis of the Optical Matrix Element in Wurtzite- and Zincblende-GaN Quantum WellsJapanese Journal of Applied Physics, 1996
- Effective-mass Hamiltonian for strained wurtzite GaN and analytical solutionsApplied Physics Letters, 1996
- Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well LasersJapanese Journal of Applied Physics, 1996
- First-principles calculations of effective-mass parameters of AlN and GaNPhysical Review B, 1995
- Orientation dependence of optical properties in long wavelength strained quantum-well lasersIEEE Journal of Selected Topics in Quantum Electronics, 1995
- Dependence of optical gain on crystal orientation in surface-emitting lasers with strained quantum wellsApplied Physics Letters, 1994
- Influence of substrate composition and crystallographic orientation on the band structure of pseudomorphic Si-Ge alloy filmsPhysical Review B, 1990
- Study of the elastic properties of gallium nitridePhysica Status Solidi (a), 1978
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971